characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5627 rev a 1-2005 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 32 0.15 250 1000 100 24 APT5015BVFR_svfr 500 32 128 30 40 370 2.96 -55 to 150 300 30 30 1300 fredfet caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? avalanche energy rated ? lower leakage ? to-247 or surface mount d 3 pak package ? fast recovery body diode power mos v ? to-247 d 3 pak bvfr svfr APT5015BVFR apt5015svfr 500v 32a 0.150 ? ? ? ? ? g d s
dynamic characteristics APT5015BVFR_svfr 050-5627 rev a 1-2005 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.4 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time (i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge (i s = -i d [cont.], di / dt = 100a/s) peak recovery current (i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.6 ? min typ max 4400 5280 600 840 230 350 200 300 30 45 80 120 12 25 14 30 55 80 11 20 unit pf nc ns min typ max 32 128 1.3 15 t j = 25c 250 t j = 125c 525 t j = 25c 1.6 t j = 125c 6.0 t j = 25c 13 t j = 125c 21 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 2.54mh, r g = 25 ? , peak i l = 32a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s - -i d [cont.], di / dt = 100a/s, v dd - v dss , t j - 150c, r g = 2.0 ? , v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.34 40 unit c/w characteristic junction to case junction to ambient
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 50100150200250 024681012 02468 020406080 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 APT5015BVFR_svfr i d = 0.5 i d [cont.] v gs = 10v 60 50 40 30 20 10 0 1.5 1.4 1.3 1.2 1.1 1.0 0.9 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 60 50 40 30 20 10 0 60 50 40 30 20 10 0 35 30 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 050-5627 rev a 1-2005 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v t j = -55c t j = +125c t j = +25c t j = -55c 5.5v 5v 4.5v 4v v gs =6v, 7v, 8v, 10v & 15v 6v 5.5v 5v 4.5v 4v v gs =15v v gs =7v, 8v & 10v t j = +125c normalized to v gs = 10v @ 0.5 i d [cont.]
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. to - 247 package outline (bvfr) d 3 pak package outline (svfr) 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 2.40 (.094) 2.70 (.106) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 1 5 10 50 100 500 .01 .1 1 10 50 0 50 100 150 200 250 300 350 0 0.4 0.8 1.2 1.6 2.0 APT5015BVFR_svfr 200 100 50 10 5 1 .5 .1 20 16 12 8 4 0 20,000 10,000 5,000 1,000 500 100 300 100 50 10 5 1 050-5627 rev a 1-2005 t j =+150c t j =+25c c rss c oss c iss v ds =250v v ds =100v v ds =400v i d = i d [cont.] t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10s 1ms 10ms 100ms dc 100s
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